"High temperature physical modeling and verification of a novel 4H-SiC ..."

Xueqian Zhong et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.05.003

access: closed

type: Journal Article

metadata version: 2020-02-22

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Xueqian Zhong, Li Zhang, Gang Xie, Qing Guo, Tao Wang, Kuang Sheng:
High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure. Microelectron. Reliab. 53(12): 1848-1856 (2013)

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