"Influence of fin number on hot-carrier injection stress induced ..."

Wenqi Zhang et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.10.015

access: closed

type: Journal Article

metadata version: 2020-03-14

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Wenqi Zhang, Tzuo-Li Wang, Yan-hua Huang, Tsu-Ting Cheng, Shih-Yao Chen, Yiying Li, Chun-Hsiang Hsu, Chih-Jui Lai, Wen-Kuan Yeh, Yilin Yang:
Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs. Microelectron. Reliab. 67: 89-93 (2016)

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