"A closed-form trapped-charge-included drain current compact model for ..."

Fei Yu et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2018.02.004

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/YuXHLL18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/YuXHLL18
Fei Yu, Chuanzhong Xu, Gongyi Huang, Wei Lin, Tsair-Chun Liang:
A closed-form trapped-charge-included drain current compact model for amorphous oxide semiconductor thin-film transistors. Microelectron. Reliab. 91: 307-312 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.