"Influence of TCE concentration in thermal oxidation on reliability of SiC ..."

Bing-Liang Yang, Paul C. K. Kwok, P. T. Lai (2006)

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DOI: 10.1016/J.MICROREL.2005.12.007

access: closed

type: Journal Article

metadata version: 2024-10-06

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Bing-Liang Yang, Paul C. K. Kwok, P. T. Lai:
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. Microelectron. Reliab. 46(12): 2044-2048 (2006)

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