"High resolution observation of defects at SiO2/4H-SiC ..."

Yuji Yamagishi, Y. Cho (2018)

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DOI: 10.1016/J.MICROREL.2018.07.058

access: closed

type: Journal Article

metadata version: 2020-10-28

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Yuji Yamagishi, Y. Cho:
High resolution observation of defects at SiO₂/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy. Microelectron. Reliab. 88-90: 242-245 (2018)

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