"Investigation and impact of LDD variations on the drain disturb in ..."

Zhaozhao Xu et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2018.03.039

access: closed

type: Journal Article

metadata version: 2021-12-25

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/XuLXHDCQKZ18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/XuLXHDCQKZ18
Zhaozhao Xu, Donghua Liu, Wei Xiong, Jun Hu, Wenting Duan, Hualun Chen, Wensheng Qian, Weiran Kong, Shichang Zou:
Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device. Microelectron. Reliab. 84: 157-162 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.