"Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility ..."

Patrick G. Whiting et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.05.015

access: closed

type: Journal Article

metadata version: 2024-10-06

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Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren:
Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52(11): 2542-2546 (2012)

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