"Lifetime estimation of SiC MOSFETs under high temperature reverse bias test."

Kosuke Uchida et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.124

access: closed

type: Journal Article

metadata version: 2020-02-22

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Kosuke Uchida, Toru Hiyoshi, Taro Nishiguchi, Hirofumi Yamamoto, Masaki Furumai, Takashi Tsuno, Yasuki Mikamura:
Lifetime estimation of SiC MOSFETs under high temperature reverse bias test. Microelectron. Reliab. 64: 425-428 (2016)

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