"Charge trapping characterization of MOCVD HfO2/p-Si interfaces ..."

I. P. Tyagulskyy et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.074

access: closed

type: Journal Article

metadata version: 2020-02-22

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I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu, Y. Lu, Richard Potter, Paul R. Chalker:
Charge trapping characterization of MOCVD HfO₂/p-Si interfaces at cryogenic temperatures. Microelectron. Reliab. 47(4-5): 726-728 (2007)

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