"Multi-gate non-volatile memories with nanowires as charge storage material."

Bing-Yue Tsui et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.01.040

access: closed

type: Journal Article

metadata version: 2020-02-22

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Bing-Yue Tsui, Pei-Yu Wang, Ting-Yeh Chen, Jung-Chien Cheng:
Multi-gate non-volatile memories with nanowires as charge storage material. Microelectron. Reliab. 50(5): 603-606 (2010)

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