"Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction ..."

Jean-Guy Tartarin et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.07.057

access: closed

type: Journal Article

metadata version: 2020-02-22

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Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux:
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectron. Reliab. 76-77: 344-349 (2017)

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