"Improved performance of GeON as charge storage layer in flash memory by ..."

Q. B. Tao, P. T. Lai (2012)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2012.06.112

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/TaoL12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/TaoL12
Q. B. Tao, P. T. Lai:
Improved performance of GeON as charge storage layer in flash memory by optimal annealing. Microelectron. Reliab. 52(11): 2597-2601 (2012)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.