"Total ionising dose effects on punch-through insulated gate bipolar ..."

Boubekeur Tala-Ighil et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.06.049

access: closed

type: Journal Article

metadata version: 2020-02-22

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Boubekeur Tala-Ighil, Amrane Oukaour, Hamid Gualous, Bertrand Boudart, Bertrand Pouderoux, Jean-Lionel Trolet, Marc Piccione:
Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour. Microelectron. Reliab. 51(9-11): 2010-2014 (2011)

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