"Influence of channel length and high-K oxide thickness on subthreshold ..."

Sanjit Kumar Swain et al. (2016)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2016.03.001

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/SwainDAPS16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/SwainDAPS16
Sanjit Kumar Swain, Arka Dutta, Sarosij Adak, Sudhansu Kumar Pati, Chandan Kumar Sarkar:
Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs. Microelectron. Reliab. 61: 24-29 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.