"Reliability for Recessed Channel Structure n-MOSFET."

J. Y. Seo et al. (2005)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2005.07.013

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/SeoLKLHY05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/SeoLKLHY05
J. Y. Seo, K. J. Lee, Y. S. Kim, S. Y. Lee, S. J. Hwang, C. K. Yoon:
Reliability for Recessed Channel Structure n-MOSFET. Microelectron. Reliab. 45(9-11): 1317-1320 (2005)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.