"Formation mechanism of concave by dielectric breakdown on silicon carbide ..."

Soshi Sato et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.09.016

access: closed

type: Journal Article

metadata version: 2020-02-22

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Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa:
Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor. Microelectron. Reliab. 58: 185-191 (2016)

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