"Identification of an RF degradation mechanism in GaN based HEMTs triggered ..."

A. Sasikumar et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.07.048

access: closed

type: Journal Article

metadata version: 2024-11-29

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A. Sasikumar, Aaron R. Arehart, Glen David Via, B. Winningham, Brian S. Poling, E. R. Heller, S. A. Ringel:
Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps. Microelectron. Reliab. 55(11): 2258-2262 (2015)

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