"A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage ..."

Mehdi Saremi et al. (2011)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2011.07.084

access: closed

type: Journal Article

metadata version: 2023-03-21

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/SaremiEAM11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/SaremiEAM11
Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi:
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. Microelectron. Reliab. 51(12): 2069-2076 (2011)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.