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"Non-homogenous gamma process: Application to SiC MOSFET threshold voltage ..."
Thomas Santini et al. (2017)
- Thomas Santini, Sébastien Morand, Mitra Fouladirad, Florent Miller, Antoine Grall
, Bruno Allard:
Non-homogenous gamma process: Application to SiC MOSFET threshold voltage instability. Microelectron. Reliab. 75: 14-19 (2017)
![](https://dblp.uni-trier.de./img/cog.dark.24x24.png)
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