"Single Event Upset rate determination for 65 nm SRAM bit-cell in LEO ..."

Muhammad Sajid et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.07.084

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type: Journal Article

metadata version: 2022-10-18

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Muhammad Sajid, Nikolay G. Chechenin, Frank Sill Torres, Usman Ali Gulzari, Muhammad Usman Butt, Zhu Ming, E. U. Khan:
Single Event Upset rate determination for 65 nm SRAM bit-cell in LEO radiation environments. Microelectron. Reliab. 78: 11-16 (2017)

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