"Breakdown behaviour of high-voltage GaN-HEMTs."

Wataru Saito et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.06.126

access: closed

type: Journal Article

metadata version: 2020-02-22

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Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka, Taichi Kobayashi:
Breakdown behaviour of high-voltage GaN-HEMTs. Microelectron. Reliab. 55(9-10): 1682-1686 (2015)

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