"Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process."

William J. Rowe et al. (2003)

> Home

Details and statistics

DOI: 10.1016/S0026-2714(03)00069-6

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/RowePSWD03
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/RowePSWD03
William J. Rowe, Bruce M. Paine, Adele E. Schmitz, Robert H. Walden, Michael J. Delaney:
Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process. Microelectron. Reliab. 43(6): 845-851 (2003)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.