"ESD characterization of multi-finger RF nMOSFET transistors by TLP and ..."

Matteo Rigato et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.06.019

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type: Journal Article

metadata version: 2022-10-02

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Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany:
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectron. Reliab. 55(9-10): 1471-1475 (2015)

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