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"Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over ..."

P. Vigneshwara Raja, Neti V. L. Narasimha Murty (2018)

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DOI: 10.1016/J.MICROREL.2018.06.021

access: closed

type: Journal Article

metadata version: 2020-02-22

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P. Vigneshwara Raja, Neti V. L. Narasimha Murty:
Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range. Microelectron. Reliab. 87: 213-221 (2018)

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