"Analysis of the gate current as a suitable indicator for FET degradation ..."

Antonio Raffo et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.08.010

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type: Journal Article

metadata version: 2020-10-26

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Antonio Raffo, Sergio Di Falco, Giovanna Sozzi, Roberto Menozzi, Dominique M. M.-P. Schreurs, Giorgio Vannini:
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime. Microelectron. Reliab. 51(2): 235-239 (2011)

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