"Operating channel temperature in GaN HEMTs: DC versus RF accelerated life ..."

James W. Pomeroy et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.09.025

access: closed

type: Journal Article

metadata version: 2020-02-22

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James W. Pomeroy, Michael J. Uren, Benoit Lambert, Martin Kuball:
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. Microelectron. Reliab. 55(12): 2505-2510 (2015)

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