"Temperature behavior and modeling of ohmic contacts to Si+ ..."

Amador Pérez-Tomás et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.03.023

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type: Journal Article

metadata version: 2024-01-24

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Amador Pérez-Tomás, Marcel Placidi, Abel Fontserè, P. M. Gammon, Michael R. Jennings:
Temperature behavior and modeling of ohmic contacts to Si⁺ implanted n-type GaN. Microelectron. Reliab. 51(8): 1325-1329 (2011)

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