"Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow ..."

Chao Peng et al. (2014)

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DOI: 10.1016/J.MICROREL.2013.12.016

access: closed

type: Journal Article

metadata version: 2023-06-26

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Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi:
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. Microelectron. Reliab. 54(4): 730-737 (2014)

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