"Electro-thermal simulation in the time domain of GaN HEMT for RF ..."

Satoshi Ono et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.063

access: closed

type: Journal Article

metadata version: 2020-02-22

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Satoshi Ono, Mauro Ciappa, Shigeru Hiura, Wolfgang Fichtner:
Electro-thermal simulation in the time domain of GaN HEMT for RF switch-mode amplifier. Microelectron. Reliab. 52(9-10): 2224-2227 (2012)

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