"Charge trapping and degradation in Ge+ ion implanted ..."

A. N. Nazarov et al. (2002)

> Home

Details and statistics

DOI: 10.1016/S0026-2714(02)00170-1

access: closed

type: Journal Article

metadata version: 2020-11-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/NazarovOLGRS02
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/NazarovOLGRS02
A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, Lars Rebohle, W. Skorupa:
Charge trapping and degradation in Ge⁺ ion implanted SiO₂ layers during high-field electron injection. Microelectron. Reliab. 42(9-11): 1461-1464 (2002)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.