"Reliability issues of double gate dielectric stacks based on hafnium ..."

Robert Mroczynski, Romuald B. Beck (2012)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2011.08.010

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/MroczynskiB12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/MroczynskiB12
Robert Mroczynski, Romuald B. Beck:
Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO₂) layers for non-volatile semiconductor memory (NVSM) applications. Microelectron. Reliab. 52(1): 107-111 (2012)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.