"Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward ..."

Matteo Meneghini et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.11.026

access: closed

type: Journal Article

metadata version: 2024-05-07

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Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016)

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