"Characterization of the transient behavior of gated/STI diodes and their ..."

Jean-Robert Manouvrier et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.06.056

access: closed

type: Journal Article

metadata version: 2020-02-22

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Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs:
Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain. Microelectron. Reliab. 49(12): 1424-1432 (2009)

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