"Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate ..."

Paolo Magnone et al. (2007)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2006.11.001

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/MagnonePCG07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/MagnonePCG07
Paolo Magnone, Calogero Pace, Felice Crupi, Gino Giusi:
Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics. Microelectron. Reliab. 47(12): 2109-2113 (2007)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.