"Investigating the TDDB lifetime growth mechanism caused by proton ..."

Teng Ma et al. (2018)

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DOI: 10.1016/J.MICROREL.2017.12.016

access: closed

type: Journal Article

metadata version: 2020-02-22

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Teng Ma, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Dandan Su, Qi Guo:
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Microelectron. Reliab. 81: 112-116 (2018)

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