"Improved interfacial quality of GaAs metal-oxide-semiconductor device with ..."

Han-Han Lu et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.10.013

access: closed

type: Journal Article

metadata version: 2023-09-11

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Han-Han Lu, Jing-Ping Xu, Lu Liu, Li-Sheng Wang, Pui To Lai, Wing Man Tang:
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH₃-plasma treated yittrium-oxynitride as interfacial passivation layer. Microelectron. Reliab. 56: 17-21 (2016)

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