"Study of radiation hardness of HfO2-based resistive switching ..."

Shih-Hung Lin et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.03.009

access: closed

type: Journal Article

metadata version: 2020-02-22

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Shih-Hung Lin, You-Lin Wu, Yu-Huei Hwang, Jing-Jenn Lin:
Study of radiation hardness of HfO₂-based resistive switching memory at nanoscale by conductive atomic force microscopy. Microelectron. Reliab. 55(11): 2224-2228 (2015)

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