"Charge trapping related channel modulation instability in P-GaN gate HEMTs."

Xueyang Li et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.040

access: closed

type: Journal Article

metadata version: 2020-02-22

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Xueyang Li, Gang Xie, Cen Tang, Kuang Sheng:
Charge trapping related channel modulation instability in P-GaN gate HEMTs. Microelectron. Reliab. 65: 35-40 (2016)

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