"N-MOSFET oxide trap characterization induced by nitridation process using ..."

Cédric Leyris et al. (2007)

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DOI: 10.1016/J.MICROREL.2006.02.010

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type: Journal Article

metadata version: 2020-11-03

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Cédric Leyris, Frédéric Martinez, Alain Hoffmann, M. Valenza, J. C. Vildeuil:
N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. Microelectron. Reliab. 47(1): 41-45 (2007)

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