"Effect of trench edge on pMOSFET reliability."

Yung-Huei Lee et al. (2001)

> Home

Details and statistics

DOI: 10.1016/S0026-2714(01)00002-6

access: closed

type: Journal Article

metadata version: 2025-01-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LeeLWM01
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LeeLWM01
Yung-Huei Lee, Tom Linton, Ken Wu, Neal R. Mielke:
Effect of trench edge on pMOSFET reliability. Microelectron. Reliab. 41(5): 689-696 (2001)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.