"Device and circuit level suppression techniques for random-dopant-induced ..."

Kuo-Fu Lee et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.01.021

access: closed

type: Journal Article

metadata version: 2023-02-24

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Kuo-Fu Lee, Yiming Li, Tien-Yeh Li, Zhong-Cheng Su, Chin-Hong Hwang:
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell. Microelectron. Reliab. 50(5): 647-651 (2010)

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