"Anomalous narrow width effect in p-channel metal-oxide-semiconductor ..."

W. S. Lau et al. (2008)

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DOI: 10.1016/J.MICROREL.2008.02.005

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type: Journal Article

metadata version: 2023-06-23

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W. S. Lau, K. S. See, C. W. Eng, W. K. Aw, Kang-Hyun Jo, K. C. Tee, James Y. M. Lee, Elgin K. B. Quek, H. S. Kim, Simon T. H. Chan, L. Chan:
Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology. Microelectron. Reliab. 48(6): 919-922 (2008)

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