"Temperature dependent drain current model for Gate Stack Insulated Shallow ..."

Vandana Kumari et al. (2012)

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DOI: 10.1016/J.MICROREL.2011.12.021

access: closed

type: Journal Article

metadata version: 2020-02-22

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Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectron. Reliab. 52(6): 974-983 (2012)

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