"Design and analysis of noise margin, write ability and read stability of ..."

Brijesh Kumar, Brajesh Kumar Kaushik, Yuvraj Singh Negi (2014)

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DOI: 10.1016/J.MICROREL.2014.08.012

access: closed

type: Journal Article

metadata version: 2020-02-22

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Brijesh Kumar, Brajesh Kumar Kaushik, Yuvraj Singh Negi:
Design and analysis of noise margin, write ability and read stability of organic and hybrid 6-T SRAM cell. Microelectron. Reliab. 54(12): 2801-2812 (2014)

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