"Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under ..."

Dongwoo Kim et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.011

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type: Journal Article

metadata version: 2024-09-16

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Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. Microelectron. Reliab. 52(9-10): 1901-1904 (2012)

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