"Thickness and temperature dependence of the leakage current in ..."

Jiseok Kim et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.151

access: closed

type: Journal Article

metadata version: 2020-02-22

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Jiseok Kim, Siddarth A. Krishnan, Sudarshan Narayanan, Michael P. Chudzik, Massimo V. Fischetti:
Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs. Microelectron. Reliab. 52(12): 2907-2913 (2012)

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