"A new two-dimensional TCAD model for threshold instability in silicon ..."

Takuo Kikuchi, Mauro Ciappa (2013)

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DOI: 10.1016/J.MICROREL.2013.07.031

access: closed

type: Journal Article

metadata version: 2020-02-22

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Takuo Kikuchi, Mauro Ciappa:
A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs. Microelectron. Reliab. 53(9-11): 1730-1734 (2013)

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