"Observation and characterization of defects in HfO2 high-K gate ..."

Vidya Kaushik et al. (2005)

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DOI: 10.1016/J.MICROREL.2004.11.045

access: closed

type: Journal Article

metadata version: 2020-02-22

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Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt:
Observation and characterization of defects in HfO₂ high-K gate dielectric layers. Microelectron. Reliab. 45(5-6): 798-801 (2005)

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