"Trench MOS barrier Schottky rectifier formed by counter-doping ..."

Miin-Horng Juang et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.08.020

access: closed

type: Journal Article

metadata version: 2020-02-22

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Miin-Horng Juang, Jim Yu, C. C. Hwang, D. C. Shye, J. L. Wang:
Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation. Microelectron. Reliab. 51(2): 365-369 (2011)

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