"A model for the critical voltage for electrical degradation of GaN high ..."

Jungwoo Joh et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.02.015

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type: Journal Article

metadata version: 2020-02-22

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Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo:
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. Microelectron. Reliab. 50(6): 767-773 (2010)

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